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STW18N60M2

MOSFET N-CH 600V 13A TO-247


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STW18N60M2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 695
  • Description: MOSFET N-CH 600V 13A TO-247 (Kg)

Details

Tags

Parameters
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 52A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 135 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STW18N
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 13A
See Relate Datesheet

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