STW21N90K5
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH5™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 299MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STW21N |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 299m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 52 ns |
| Continuous Drain Current (ID) | 18.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 900V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 24.45mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
