STW26NM50
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Rise Time | 15ns |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Number of Pins | 3 |
| Weight | 9.071847g |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±30V |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ |
| Fall Time (Typ) | 19 ns |
| JESD-609 Code | e3 |
| Turn-Off Delay Time | 13 ns |
| Part Status | Not For New Designs |
| Continuous Drain Current (ID) | 30A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Threshold Voltage | 3V |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Gate to Source Voltage (Vgs) | 30V |
| Resistance | 120mOhm |
| Drain Current-Max (Abs) (ID) | 26A |
| Subcategory | FET General Purpose Power |
| Drain to Source Breakdown Voltage | 500V |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Avalanche Energy Rating (Eas) | 740 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Current Rating | 30A |
| Base Part Number | STW26N |
| Height | 24.45mm |
| Pin Count | 3 |
| Length | 15.75mm |
| Number of Elements | 1 |
| Width | 5.15mm |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Power Dissipation-Max | 313W Tc |
| REACH SVHC | No SVHC |
| Element Configuration | Single |
| RoHS Status | ROHS3 Compliant |
| Operating Mode | ENHANCEMENT MODE |
| Lead Free | Lead Free |
| Power Dissipation | 313W |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
See Relate Datesheet
