Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | MDmesh™ M2 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STW28N |
Number of Elements | 1 |
Power Dissipation-Max | 170W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 13.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Turn-Off Delay Time | 59 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.18Ohm |
Pulsed Drain Current-Max (IDM) | 80A |
DS Breakdown Voltage-Min | 650V |
Avalanche Energy Rating (Eas) | 760 mJ |
Height | 20.15mm |
Length | 15.75mm |
Width | 5.15mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |