Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | Automotive, AEC-Q101, MDmesh™ V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STW62N |
Number of Elements | 1 |
Power Dissipation-Max | 330W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330W |
Turn On Delay Time | 101 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 49m Ω @ 23A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6420pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 46A Tc |
Gate Charge (Qg) (Max) @ Vgs | 142nC @ 10V |
Rise Time | 11ns |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 8 ns |
Continuous Drain Current (ID) | 46A |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.049Ohm |
Drain to Source Breakdown Voltage | 710V |
Height | 20.15mm |
Length | 15.75mm |
Width | 5.15mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |