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STW62N65M5

STW62N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STW62N65M5
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 221
  • Description: STW62N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STW62N
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Turn On Delay Time 101 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6420pF @ 100V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.049Ohm
Drain to Source Breakdown Voltage 710V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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