STW70N60M2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STW70N |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 450W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 450W |
| Turn On Delay Time | 32 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
| Rise Time | 17ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 155 ns |
| Continuous Drain Current (ID) | 68A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.04Ohm |
| Pulsed Drain Current-Max (IDM) | 272A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 9000 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
