Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -50°C~150°C TJ |
Packaging | Tube |
Series | STripFET™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 34MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STW75N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 190W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 190W |
Turn On Delay Time | 53 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 34m Ω @ 37A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3260pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Rise Time | 33ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 29 ns |
Turn-Off Delay Time | 75 ns |
Continuous Drain Current (ID) | 37A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-247AB |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 200V |
Avalanche Energy Rating (Eas) | 205 mJ |
Height | 20.15mm |
Length | 15.75mm |
Width | 5.15mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |