STW88N65M5
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Base Part Number | STW88N |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 450W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 450W |
| Case Connection | DRAIN |
| Turn On Delay Time | 141 ns |
| FET Type | N-Channel |
| Factory Lead Time | 1 Week |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 42A, 10V |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Mount | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 8825pF @ 100V |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 84A Tc |
| Number of Pins | 3 |
| Gate Charge (Qg) (Max) @ Vgs | 204nC @ 10V |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | 150°C TJ |
| Vgs (Max) | ±25V |
| Packaging | Tube |
| Turn-Off Delay Time | 141 ns |
| Series | MDmesh™ V |
| Continuous Drain Current (ID) | 84A |
| Threshold Voltage | 4V |
| JESD-609 Code | e3 |
| Part Status | Active |
| Gate to Source Voltage (Vgs) | 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain to Source Breakdown Voltage | 650V |
| Avalanche Energy Rating (Eas) | 2000 mJ |
| Number of Terminations | 3 |
| Max Junction Temperature (Tj) | 150°C |
| ECCN Code | EAR99 |
| Nominal Vgs | 4 V |
| Resistance | 24mOhm |
| Height | 24.45mm |
| Length | 15.75mm |
| Subcategory | FET General Purpose Power |
| Width | 5.15mm |
See Relate Datesheet
