Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.0067 |
Subcategory | Other Transistors |
Max Power Dissipation | 1.2W |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Base Part Number | STX117 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 800mW |
Power - Max | 1.2W |
Transistor Application | SWITCHING |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 4V |
Current - Collector Cutoff (Max) | 2mA |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
Collector Emitter Breakdown Voltage | 100V |
Collector Emitter Saturation Voltage | 2.5V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 500 |
Height | 4.5mm |
Length | 4.8mm |
Width | 3.8mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |