Parameters | |
---|---|
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 900mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 2V |
Current - Collector Cutoff (Max) | 10μA |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 150mA, 3A |
Collector Emitter Breakdown Voltage | 30V |
Current - Collector (Ic) (Max) | 3A |
Transition Frequency | 100MHz |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 5V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 900mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Base Part Number | STX826 |