Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Supplier Device Package | TO-252, (D-Pak) |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | TrenchFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 200mOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 1.25W Ta 20W Tc |
Element Configuration | Single |
Power Dissipation | 20W |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 200mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 6.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 8 ns |
Continuous Drain Current (ID) | 6.5A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Input Capacitance | 240pF |
Drain to Source Resistance | 200mOhm |
Rds On Max | 200 mΩ |
Nominal Vgs | 1 V |
Height | 2.38mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |