Parameters | |
---|---|
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 31m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 23A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 50A |
Dual Supply Voltage | 60V |
Avalanche Energy Rating (Eas) | 20 mJ |
Nominal Vgs | 2 V |
Height | 2.3876mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 31mOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3W Ta 100W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 100W |