Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3W Ta 136W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 15m Ω @ 17A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4950pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Rise Time | 70ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 175 ns |
Turn-Off Delay Time | 175 ns |
Continuous Drain Current (ID) | 50A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.015Ohm |
Pulsed Drain Current-Max (IDM) | 80A |
DS Breakdown Voltage-Min | 60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |