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SUD50P08-25L-E3

MOSFET P-CH 80V 50A DPAK


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUD50P08-25L-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 470
  • Description: MOSFET P-CH 80V 50A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25.2mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 8.3W Ta 136W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 8.3W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25.2m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 40V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) -12.5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage -80V
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 175°C
Height 2.507mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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