Parameters | |
---|---|
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 8.3W Ta 136W Tc |
Factory Lead Time | 1 Week |
Element Configuration | Single |
Contact Plating | Tin |
Operating Mode | ENHANCEMENT MODE |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Power Dissipation | 8.3W |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Case Connection | DRAIN |
Number of Pins | 3 |
Turn On Delay Time | 15 ns |
Weight | 1.437803g |
FET Type | P-Channel |
Transistor Element Material | SILICON |
Transistor Application | SWITCHING |
Operating Temperature | -55°C~175°C TJ |
Rds On (Max) @ Id, Vgs | 43m Ω @ 9.2A, 10V |
Packaging | Tape & Reel (TR) |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Published | 2013 |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 50V |
Series | TrenchFET® |
Current - Continuous Drain (Id) @ 25°C | 37.1A Tc |
JESD-609 Code | e3 |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Rise Time | 160ns |
Drain to Source Voltage (Vdss) | 100V |
Pbfree Code | yes |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Part Status | Active |
Vgs (Max) | ±20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 100 ns |
Number of Terminations | 2 |
Turn-Off Delay Time | 110 ns |
Continuous Drain Current (ID) | -9.2A |
Threshold Voltage | -3V |
ECCN Code | EAR99 |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Resistance | 43mOhm |
Pulsed Drain Current-Max (IDM) | 40A |
Max Junction Temperature (Tj) | 175°C |
Height | 2.507mm |
Length | 6.73mm |
Subcategory | Other Transistors |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Technology | MOSFET (Metal Oxide) |
Lead Free | Lead Free |
Terminal Form | GULL WING |