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SUD70090E-GE3

MOSFET N-CH 100V 50A DPAK TO252


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUD70090E-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 734
  • Description: MOSFET N-CH 100V 50A DPAK TO252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2017
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Drain-source On Resistance-Max 0.0089Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 80 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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