Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | ThunderFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 65.2W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 65.2W |
Case Connection | DRAIN |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 44.7m Ω @ 8.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 42A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0447Ohm |
Drain to Source Breakdown Voltage | 150V |
Pulsed Drain Current-Max (IDM) | 40A |
Max Junction Temperature (Tj) | 175°C |
Height | 2.507mm |
RoHS Status | ROHS3 Compliant |