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SUD90330E-GE3

MOSFET N-CH 200V 35.8A TO252AA


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUD90330E-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 830
  • Description: MOSFET N-CH 200V 35.8A TO252AA (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Number of Channels 1
Power Dissipation-Max 125W Tc
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37.5m Ω @ 12.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35.8A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 35.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 175°C
Height 2.507mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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