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SUG80050E-GE3

MOSFET N-Channel 150V 100A 3-Pin TO-247


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUG80050E-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 611
  • Description: MOSFET N-Channel 150V 100A 3-Pin TO-247 (Kg)

Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 75V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Max Junction Temperature (Tj) 175°C
Height 25.11mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 500W Tc
Power Dissipation 500W
Turn On Delay Time 18 ns
See Relate Datesheet

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