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SUM110P06-08L-E3

MOSFET P-CH 60V 110A D2PAK


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUM110P06-08L-E3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 627
  • Description: MOSFET P-CH 60V 110A D2PAK (Kg)

Details

Tags

Parameters
Drain to Source Resistance 6.5mOhm
Rds On Max 8 mΩ
Height 5.08mm
Length 10.41mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.75W Ta 272W Tc
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 190ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 300 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) -110A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 9.2nF
Max Junction Temperature (Tj) 175°C
See Relate Datesheet

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