Parameters | |
---|---|
Drain to Source Resistance | 6.5mOhm |
Rds On Max | 8 mΩ |
Height | 5.08mm |
Length | 10.41mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | TO-263 (D2Pak) |
Weight | 1.437803g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | TrenchFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 8MOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.75W Ta 272W Tc |
Element Configuration | Single |
Power Dissipation | 3.75W |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 110A Tc |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Rise Time | 190ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 300 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | -110A |
Threshold Voltage | -1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Input Capacitance | 9.2nF |
Max Junction Temperature (Tj) | 175°C |