SUP65P04-15-E3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.75W Ta 120W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.75W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 65A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Rise Time | 380ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 140 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | -65A |
| Threshold Voltage | -3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Nominal Vgs | -3 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
