Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Channels | 1 |
Power Dissipation-Max | 375W Tc |
Power Dissipation | 375W |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 110 ns |
Continuous Drain Current (ID) | -120A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Max Junction Temperature (Tj) | 175°C |
Drain to Source Resistance | 8.1mOhm |
Height | 19.31mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | TrenchFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |