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SUP80090E-GE3

MOSFET N-CH 150V 128A TO220AB


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SUP80090E-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 771
  • Description: MOSFET N-CH 150V 128A TO220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3425pF @ 75V
Current - Continuous Drain (Id) @ 25°C 128A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 128A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.011Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 180 mJ
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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