Parameters | |
---|---|
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 90A Tc |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Rise Time | 190ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 300 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 90A |
Threshold Voltage | -1V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 200A |
Max Junction Temperature (Tj) | 175°C |
Height | 19.31mm |
Length | 10.41mm |
Width | 4.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 6.000006g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 9.3mOhm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.4W Ta 250W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.4W |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.3m Ω @ 30A, 10V |