Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Output Power | 80W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 9A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15mA 5V |
Collector Emitter Breakdown Voltage | 50V |
Gain | 8dB ~ 8.5dB |
Max Frequency | 1.215GHz |
Frequency - Transition | 960MHz~1.215GHz |
Highest Frequency Band | L B |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | 55AZ |
Number of Pins | 55 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 1996 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Max Power Dissipation | 290W |