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TEMT1000

VISHAY SEMICONDUCTOR TEMT1000 PHOTO TRANSISTOR


  • Manufacturer: Vishay Semiconductor Opto Division
  • Nocochips NO: 879-TEMT1000
  • Package: 2-SMD, Z-Bend
  • Datasheet: PDF
  • Stock: 164
  • Description: VISHAY SEMICONDUCTOR TEMT1000 PHOTO TRANSISTOR (Kg)

Details

Tags

Parameters
Radiation Hardening No
REACH SVHC Unknown
Max Operating Temperature 85°C
RoHS Status ROHS3 Compliant
Min Operating Temperature -40°C
Lead Free Lead Free
Max Power Dissipation 100mW
Orientation Top View
Number of Elements 1
Polarity NPN
Number of Channels 1
Power Dissipation 100mW
Viewing Angle 30°
Power - Max 100mW
Lens Style Domed
Rise Time 2μs
Fall Time (Typ) 2.3 μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 70V
Power Consumption 100mW
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 50mA
Wavelength 950nm
Factory Lead Time 1 Week
Contact Plating Tin
Collector Emitter Saturation Voltage 300mV
Mount Surface Mount
Max Breakdown Voltage 70V
Mounting Type Surface Mount
Dark Current 200nA
Package / Case 2-SMD, Z-Bend
Current - Dark (Id) (Max) 200nA
Number of Pins 2
Height 2.7mm
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Length 2.5mm
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Width 2mm
See Relate Datesheet

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