Parameters | |
---|---|
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 30W |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 400V |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 430V |
Turn On Time | 78 ns |
Test Condition | 320V, 240A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 240A |
Turn Off Time-Nom (toff) | 410 ns |
Current - Collector Pulsed (Icm) | 240A |
Td (on/off) @ 25°C | 46ns/140ns |