Parameters | |
---|---|
Element Configuration | Single |
Power Dissipation | 2W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 8A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A 4V |
Current - Collector Cutoff (Max) | 50μA |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 80mA, 8A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 4MHz |
Collector Emitter Saturation Voltage | 2V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 200 |
Height | 9.28mm |
Length | 10.28mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 2W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -8A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | TIP10* |
Pin Count | 3 |
Number of Elements | 1 |
Polarity | PNP |