Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-218-3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Voltage - Rated DC | 80V |
Max Power Dissipation | 125W |
Current Rating | 10A |
Base Part Number | TIP141 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 125W |
Transistor Application | SWITCHING |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 4V |
Current - Collector Cutoff (Max) | 2mA |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 10A |
Collector Emitter Breakdown Voltage | 80V |
Collector Emitter Saturation Voltage | 2V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
Continuous Collector Current | 10A |
VCEsat-Max | 3 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |