Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-218-3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.29.00.95 |
Subcategory | Other Transistors |
Max Power Dissipation | 125W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 125W |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 4V |
Collector Emitter Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 1000 |
Continuous Collector Current | 10A |
RoHS Status | Non-RoHS Compliant |