Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3 Full Pack |
Weight | 6.962g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2002 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 125W |
Current Rating | -2A |
Base Part Number | TIP147 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 125W |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A 4V |
Current - Collector Cutoff (Max) | 2mA |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 10A |
Collector Emitter Breakdown Voltage | 100V |
Collector Emitter Saturation Voltage | 2V |
Collector Base Voltage (VCBO) | -100V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 1000 |
Height | 16.7mm |
Length | 15.7mm |
Width | 5.7mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |