Parameters | |
---|---|
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | -700mV |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 15 |
Height | 16.51mm |
Length | 10.67mm |
Width | 4.83mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.214012g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 2W |
Current Rating | -1A |
Frequency | 3MHz |
Base Part Number | TIP30 |
Number of Elements | 1 |
Voltage | 100V |
Element Configuration | Single |
Current | 1A |
Power Dissipation | 2W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A 4V |
Current - Collector Cutoff (Max) | 300μA |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
Collector Emitter Breakdown Voltage | 100V |