Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.214g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 80V |
Max Power Dissipation | 2W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 6A |
Frequency | 3MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | TIP41 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 2W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 6A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A 4V |
Current - Collector Cutoff (Max) | 700μA |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | 1.5V |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 15 |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |