TIS75
| Parameters | |
|---|---|
| Power Dissipation | 350mW |
| Output Power | 350mW |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V VGS |
| Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 80mA |
| Gate to Source Voltage (Vgs) | -30V |
| Drain to Source Resistance | 60Ohm |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 4nA |
| Resistance - RDS(On) | 60Ohm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 350mW |
| Current Rating | 20mA |
| Base Part Number | TIS75 |
| Element Configuration | Single |
See Relate Datesheet
