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TK12J60U(F)

MOSFET N-CH 600V 12A TO-3PN


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-TK12J60U(F)
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 718
  • Description: MOSFET N-CH 600V 12A TO-3PN (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2008
Series DTMOSII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 144W Tc
Element Configuration Single
Power Dissipation 144W
Turn On Delay Time 60 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 19mm
Length 40.5mm
Width 4.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet

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