Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2008 |
Series | DTMOSII |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 144W Tc |
Element Configuration | Single |
Power Dissipation | 144W |
Turn On Delay Time | 60 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 400m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 30ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 75 ns |
Continuous Drain Current (ID) | 12A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Height | 19mm |
Length | 40.5mm |
Width | 4.8mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |