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TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A 3DP 2-7K1A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-TK40P04M1(T6RSS-Q)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 457
  • Description: MOSFET N-CH 40V 40A 3DP 2-7K1A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 47W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 47W
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 2.3mm
Length 10mm
Width 6.1mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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