Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | U-MOSVI-H |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 47W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 47W |
Case Connection | DRAIN |
Turn On Delay Time | 27 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 200μA |
Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 40A Ta |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 63 ns |
Continuous Drain Current (ID) | 40A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Height | 2.3mm |
Length | 10mm |
Width | 6.1mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |