TN0104N8-G
| Parameters | |
|---|---|
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 52.786812mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1.6V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA Tj |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 3V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 630mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.63A |
| Drain-source On Resistance-Max | 2Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
See Relate Datesheet
