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TN2124K1-G

Mosfet; N-channel Enhancement-mode; 240V; 15 OHM3 SOT-23T/R


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-TN2124K1-G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 469
  • Description: Mosfet; N-channel Enhancement-mode; 240V; 15 OHM3 SOT-23T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 120mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 134mA Tj
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 3V 4.5V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 134mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 240V
Feedback Cap-Max (Crss) 5 pF
Height 950μm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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