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TN2425N8-G

Trans MOSFET N-CH 250V 0.48A 4-Pin(3+Tab) SOT-89


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-TN2425N8-G
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 510
  • Description: Trans MOSFET N-CH 250V 0.48A 4-Pin(3+Tab) SOT-89 (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 480mA Tj
Rise Time 10ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 480mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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