Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 4 |
Weight | 52.786812mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
Technology | MOSFET (Metal Oxide) |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-PSSO-F3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.6W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Case Connection | DRAIN |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.5 Ω @ 200mA, 3V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 400mA Tj |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 3V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 400mA |
Gate to Source Voltage (Vgs) | 15V |
Drain to Source Breakdown Voltage | 18V |
Pulsed Drain Current-Max (IDM) | 0.56A |
Height | 1.6mm |
Length | 4.6mm |
Width | 2.6mm |
RoHS Status | ROHS3 Compliant |