Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 84.99187mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 2mA |
Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 260mA Tj |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 260mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.26A |
Drain-source On Resistance-Max | 5Ohm |
Drain to Source Breakdown Voltage | 400V |
Height | 1.65mm |
Length | 4.9mm |
Width | 3.9mm |
RoHS Status | ROHS3 Compliant |