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TP0604N3-G

MOSFET P-CH 40V 430MA TO92-3


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-TP0604N3-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 723
  • Description: MOSFET P-CH 40V 430MA TO92-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 20V
Current - Continuous Drain (Id) @ 25°C 430mA Tj
Rise Time 7ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.75A
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage -40V
Feedback Cap-Max (Crss) 60 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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