Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 740mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 430mA Tj |
Rise Time | 7ns |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 430mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.75A |
Drain-source On Resistance-Max | 2Ohm |
Drain to Source Breakdown Voltage | -40V |
Feedback Cap-Max (Crss) | 60 pF |
Height | 5.33mm |
Length | 5.21mm |
Width | 4.19mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |