TP2510N8-G
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5 Ω @ 750mA, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 480mA Tj |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 480mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Pulsed Drain Current-Max (IDM) | 2.5A |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 52.786812mg |
See Relate Datesheet
