Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 4 |
Weight | 52.786812mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 12Ohm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-PSSO-F3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.6W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 260mA Tj |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 220V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | -260mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.26A |
Drain to Source Breakdown Voltage | -220V |
Pulsed Drain Current-Max (IDM) | 2A |
Height | 1.6mm |
Length | 4.6mm |
Width | 2.6mm |
RoHS Status | ROHS3 Compliant |