TP65H050WS
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 119W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 34A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
