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TPCA8051-H(T2L1,VM

MOSFET N-CH 80V 28A 8-SOP ADV


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-TPCA8051-H(T2L1,VM
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET N-CH 80V 28A 8-SOP ADV (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7540pF @ 10V
Current - Continuous Drain (Id) @ 25°C 28A Ta
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 255 mJ
RoHS Status RoHS Compliant
See Relate Datesheet

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