Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | U-MOSVI-H |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | S-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.6W Ta 45W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.8W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.4m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 7540pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 28A Ta |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 28A |
Gate to Source Voltage (Vgs) | 20V |
Avalanche Energy Rating (Eas) | 255 mJ |
RoHS Status | RoHS Compliant |