Parameters | |
---|---|
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | 55KV |
Number of Pins | 55 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 1997 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Max Power Dissipation | 2.9kW |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 4 |
JESD-30 Code | R-CDFM-F4 |
Power - Max | 2900W |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 80A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 6dB |
Max Frequency | 1.09GHz |
Frequency - Transition | 1.09GHz |
Highest Frequency Band | L B |