Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 180mOhm |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
Subcategory | Other Transistors |
Voltage - Rated DC | -15V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -1.6A |
Base Part Number | TPS1100 |
Pin Count | 8 |
Output Voltage | -15V |
Max Output Current | 1.6A |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 791mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 791mW |
Turn On Delay Time | 4.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 15V |
Drive Voltage (Max Rds On,Min Rds On) | 2.7V 10V |
Vgs (Max) | +2V, -15V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 13 ns |
Continuous Drain Current (ID) | -1.6A |
Gate to Source Voltage (Vgs) | 2V |
Drain to Source Breakdown Voltage | -15V |
Nominal Vgs | -1.25 V |
Height | 1.75mm |
Length | 4.9mm |
Width | 3.91mm |
Thickness | 1.58mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |