TPS1100PWR
| Parameters | |
|---|---|
| Thickness | 1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -15V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1.27mA |
| Base Part Number | TPS1100 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 504mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 504mW |
| Turn On Delay Time | 4.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 1.27A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 15V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 10V |
| Vgs (Max) | +2V, -15V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 1.27A |
| Gate to Source Voltage (Vgs) | 2V |
| Drain-source On Resistance-Max | 0.4Ohm |
| Drain to Source Breakdown Voltage | -15V |
| Height | 1.2mm |
| Length | 3mm |
| Width | 4.4mm |
See Relate Datesheet
