banner_page

TTA0002(Q)

TTA0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-TTA0002(Q)
  • Package: TO-3PL
  • Datasheet: -
  • Stock: 587
  • Description: TTA0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 180W
Frequency 30MHz
Number of Elements 1
Power Dissipation 180W
Gain Bandwidth Product 30MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 18A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 900mA, 9A
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage -2V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good